MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 2
MBT6429DW1T1G
Manufacturer Part Number
MBT6429DW1T1G
Description
TRANS DUAL NPN 200MA 40V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MBT6429DW1T1G.pdf
(5 pages)
Specifications of MBT6429DW1T1G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 100µA, 5V
Power - Max
150mW
Frequency - Transition
700MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
700 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
500 at 0.01 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MBT6429DW1T1G
MBT6429DW1T1GOSTR
MBT6429DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
900
Company:
Part Number:
MBT6429DW1T1G
Manufacturer:
ON
Quantity:
30 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
C
C
C
C
C
C
C
C
CE
CB
EB
CB
EB
= 1.0 mAdc, I
= 0.1 mAdc, I
= 0.01 mAdc, V
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 1.0 mAdc, V
= 5.0 Vdc, I
= 0.5 Vdc, I
= 30 Vdc)
= 30 Vdc, I
= 10 Vdc, I
B
E
E
B
E
C
C
CE
B
CE
CE
CE
CE
= 0.5 mAdc)
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
CE
= 0, f = 1.0 MHz)
= 5.0 mAdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
I
CE(sat)
C
I
I
BE(on)
C
h
CBO
EBO
CES
f
obo
FE
ibo
T
0.56
Min
500
500
500
500
100
45
55
−
−
−
−
−
−
−
1250
Max
0.01
0.01
0.66
700
0.1
0.2
0.6
3.0
8.0
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
pF
−