DMMT5401-7 Diodes Inc, DMMT5401-7 Datasheet - Page 2

• Manufacturer Part Number: DMMT5401-7
• Description: TRANS MATCHED PNP 300MW SOT26
• Manufacturer: Diodes Inc

Specifications of DMMT5401-7

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-26
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: DMMT5401DITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
DS30437 Rev. 6 - 2
400
350
300
250
200
150
100
50
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
0
0
V
BE(SAT)
25
T , AMBIENT TEMPERATURE (°C)
are matched with typical matched tolerances of 1% and maximum of 2%.
Fig. 1, Max Power Dissipation vs.
A
50
Characteristic
Ambient Temperature
75
FE
100 125
, (matched at I
@T
A
= 25°C unless otherwise specified
150
C
= -10mA and V
175
200
CE
www.diodes.com
= -5V) Collector Emitter Saturation Voltage, V
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
h
NF
f
FE
obo
T
2 of 4
fe
-160
-150
Min
-5.0
100
50
60
50
40
⎯
⎯
⎯
⎯
⎯
⎯
10.0
0.01
1.0
0.1
1
Max
-0.2
-0.5
-1.0
240
200
300
-50
-50
6.0
8.0
⎯
⎯
⎯
⎯
⎯
I
I
C
B
Fig. 2, Collector Emitter Saturation Voltage
= 10
I , COLLECTOR CURRENT (mA)
C
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
T = 150°C
A
vs. Collector Current
10
T = 25°C
A
CE(SAT)
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
S
= -10μA, I
= -10mA, I
= -10mA, I
= -100μA, I
= -1.0mA, I
= -1.0mA, V
= -10mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 10Ω, f = 1.0kHz
= -3.0V, I
= -10V, I
= -5.0V, I
= -120V, I
= -120V, I
= -10V, f = 1.0MHz, I
= -10V, I
, and Base Emitter Saturation Voltage,
Test Condition
C
B
B
B
B
C
C
100
E
B
C
C
= 0
E
E
T = -50°C
= -1.0mA
= -1.0mA
= -5.0mA
= -5.0mA
= -1.0mA,
= -10mA,
CE
CE
CE
= 0
= 0
= 0
= -200μA,
A
= 0
= 0, T
= -5.0V
= -5.0V
= -5.0V
A
= 100°C
© Diodes Incorporated
E
= 0
1,000
DMMT5401