IMH10AT110 Rohm Semiconductor, IMH10AT110 Datasheet - Page 2

• Manufacturer Part Number: IMH10AT110
• Description: TRANS DUAL NPN 50V 100MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMH10AT110

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IMH10AT110TR

Transistors
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
Electrical characteristics (Ta=25 C)
Electrical characteristic curves
500m
200m
100m
Fig.1 Input voltage vs. output current
Absolute maximum ratings (Ta=25 C)
100
50
20
10
100 200
2
1
5
(ON characteristics)
Parameter
Parameter
OUTPUT CURRENT : I
Ta= 40 C
500 1m
100 C
25 C
EMH10,UMH10N
IMH10A
2m
5m 10m 20m
Symbol
R
V
O
V
V
I
O (off)
G
R
2
O (on)
(A)
I (off)
I (on)
I
f
/R
I
T
1
V
I
O
1
=0.3V
50m100m
Symbol
Min.
1.54
I
1.1
80
17
C (Max.)
Tstg
V
V
Pd
I
CC
O
IN
Typ.
250
0.1
2.2
21
Fig.2 Output current vs. input voltage
500
200
100
10m
50
20
10
5m
2m
1m
5
2
1
150 (TOTAL)
300 (TOTAL)
0
55~ 150
Max.
(OFF characteristics)
2.86
0.5
0.3
3.6
0.5
Limits
26
100
100
50
12
0.5
5
INPUT VOLTAGE : V
Unit
MHz
Ta=100 C
mA
k
1.0
V
V
A
25 C
40 C
1.5
V
V
I
V
V
V
V
O
CC
O
I
CC
O
Unit
mW
/I
CE
=5V
mA
mA
=0.3V, I
=5V, I
I
V
V
=5mA/0.25mA
C
=5V, I
=50V, V
=10mA, I
2.0
I (off)
(V)
O
O
=10mA
V
EMH10 / UMH10N / IMH10A
O
2.5
=100 A
CC
1
2
Conditions
=5mA
I
=0V
=5V
E
= 5mA, f=100MHz
3.0
500
200
100
50
20
10
1k
100 200
5
2
1
Fig.3 DC current gain vs. output
V
O
=5V
current
Ta=100 C
OUTPUT CURRENT : I
500 1m
25 C
40 C
2m
5m 10m 20m 50m 100m
O
(A)