MT48LC4M32LFF5-8 IT:G Micron Technology Inc, MT48LC4M32LFF5-8 IT:G Datasheet - Page 49

• Manufacturer Part Number: MT48LC4M32LFF5-8 IT:G
• Description: DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48LC4M32LFF5-8 IT:G

• Density: 128 Mb
• Maximum Clock Rate: 125 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 19|8|7 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 115mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Specifications
Table 12:
Temperature and Thermal Impedance
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Parameter
Voltage on V
Relative to V
Voltage on inputs, NC or I/O pins relative to V
Relative to V
Operating temperature
T
T
T
Storage temperature (plastic)
A
A
A
(commercial)
(industrial)
(automotive)
SS
SS
DD
Absolute Maximum Ratings
(V devices)
(V devices)
/V
DD
Q supply relative to V
Stresses greater than those listed in Table 12 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the Mobile SDRAM device’s temperature specifications, shown in
Table 13 on page 50, be maintained to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. The
thermal impedances are listed in Table 14 on page 50 for the applicable die revision and
packages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 14 on page 50. To ensure the compatibility of current and future designs,
contact Micron Applications Engineering to confirm thermal impedance values.
The SDRAM device’s safe junction temperature range can be maintained when the T
specification is not exceeded. In applications where the device’s ambient temperature is
too high, use of forced air and/or heat sinks may be required to satisfy the case tempera-
ture specifications.
SS
(LC devices)
SS
(LC devices)
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
Min
–0.5
–40
–40
–55
0.5
–1
–1
0
©2001 Micron Technology, Inc. All rights reserved.
+105
+150
Max
+4.6
+3.6
+4.6
+3.6
+70
+85
Rating
°C
°C
V
V
V
V
C