PEMF21,115 NXP Semiconductors, PEMF21,115 Datasheet - Page 3

• Manufacturer Part Number: PEMF21,115
• Description: LOADSWITCH PNP 12V 500MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMF21,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 280MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 280 MHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Continuous Collector Current: - 500 mA
• Peak Dc Collector Current: - 1 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 6 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2173-2; 934058163115; PEMF21 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. Reflow soldering is the only recommended soldering method.
2004 Jan 12
Transistor TR1
V
V
V
I
I
I
P
Transistor TR2
V
V
V
V
I
I
P
Per device
P
T
T
T
Per device
R
C
CM
BM
O
CM
stg
j
amb
CBO
CEO
EBO
tot
CBO
CEO
EBO
i
tot
tot
12 V PNP loadswitch
th(j-a)
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
positive
negative
PARAMETER
PARAMETER
open emitter
open base
open collector
T
open emitter
open base
open collector
T
T
notes 1 and 2
3
amb
amb
amb
= 25 °C; note 1
= 25 °C; note 1
= 25 °C; note 1
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
416
Product data sheet
−15
−12
−6
−500
−1
−100
200
50
50
10
+40
−10
100
100
200
300
+150
150
+150
MAX.
PEMF21
UNIT
K/W
V
V
V
mA
A
mA
mW
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
UNIT