PEMF21,115 NXP Semiconductors, PEMF21,115 Datasheet - Page 4

• Manufacturer Part Number: PEMF21,115
• Description: LOADSWITCH PNP 12V 500MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMF21,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 280MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 280 MHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Continuous Collector Current: - 500 mA
• Peak Dc Collector Current: - 1 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 6 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2173-2; 934058163115; PEMF21 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Jan 12
Transistor TR1
I
I
h
V
R
V
V
f
C
Transistor TR2
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
EBO
T
CBO
CEO
EBO
FE
FE
CEsat
BEsat
BEon
CEsat
i(off)
i(on)
12 V PNP loadswitch
CEsat
c
c
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
V
V
V
I
I
V
I
f = 100 MHz
V
V
V
V
V
V
V
V
C
C
C
C
C
CB
EB
CE
CE
CB
CB
CE
EB
CE
CE
CE
CB
= −200 mA; I
= −500 mA; I
= −500 mA; I
= −100 mA; V
= 10 mA; I
= −5 V; I
= 5 V; I
= −15 V; I
= −2 V; I
= −2 V; I
= −10 V; I
= 50 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
4
CONDITIONS
C
C
C
C
B
C
C
E
B
E
= 0
= 5 mA
= 100 µA
C
E
E
= 0.5 mA
= 0
= −10 mA
= −100 mA; note 1
= 0
= 0
= i
B
B
B
= 10 mA
= 0
= i
CE
= −10 mA
= −50 mA; note 1 −
= −50 mA; note 1 −
e
e
= 0; f = 1 MHz
= −5 V;
= 0; f = 1 MHz −
−
−
200
−
−
100
−
−
−
30
−
−
3
7
0.8
−
MIN.
−
−
−
−
300
−
−
280
−
−
−
−
−
−
−
−
10
1
−
TYP.
Product data sheet
−100
−100
−
−250
500
−1.1
−0.9
−
10
100
1
400
−
300
0.5
−
13
1.2
2.5
PEMF21
MAX.
nA
nA
mV
mΩ
V
V
MHz
pF
nA
µA
µA
mV
V
V
kΩ
pF
UNIT