PEMF21,115 NXP Semiconductors, PEMF21,115 Datasheet - Page 7

• Manufacturer Part Number: PEMF21,115
• Description: LOADSWITCH PNP 12V 500MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMF21,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 12V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 280MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 280 MHz
• Collector- Emitter Voltage Vceo Max: - 12 V
• Continuous Collector Current: - 500 mA
• Peak Dc Collector Current: - 1 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 6 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2173-2; 934058163115; PEMF21 T/R

NXP Semiconductors
2004 Jan 12
handbook, halfpage
12 V PNP loadswitch
Transistor TR2; V
(1) T
(2) T
(3) T
Fig.10 Input-on voltage as a function of collector
V i(on)
(V)
10
10
10
−1
amb
amb
amb
10
1
2
−1
= −40 °C.
= 25 °C.
= 100 °C.
current; typical values.
CE
= 0.3 V.
1
10
(1)
(2)
(3)
I C (mA)
MHC705
10
2
7
handbook, halfpage
Transistor TR2; V
(1) T
(2) T
(3) T
Fig.11 Input-off voltage as a function of collector
V i(off)
(V)
10
10
−1
amb
amb
amb
10
1
−2
= −40 °C.
= 25 °C.
= 100 °C.
current; typical values.
CE
= 5 V.
10
−1
(1)
(2)
(3)
1
Product data sheet
I C (mA)
PEMF21
MHC706
10