PUMD24,115 NXP Semiconductors, PUMD24,115 Datasheet - Page 10

• Manufacturer Part Number: PUMD24,115
• Description: TRANS PREBIASED DUAL SOT666
• Manufacturer: NXP Semiconductors

Specifications of PUMD24,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 100 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058902115; PUMD24 T/R; PUMD24 T/R

Philips Semiconductors
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information . . . . . . . . . . . . . . . . . . . . . 9
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
NPN/PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
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Published in The Netherlands
PEMD24; PUMD24
Document number: 9397 750 14457
Date of release: 2 May 2005