UMD5NTR Rohm Semiconductor, UMD5NTR Datasheet - Page 2

• Manufacturer Part Number: UMD5NTR
• Description: TRANS DGTL DUAL 50V UMT6
• Manufacturer: Rohm Semiconductor

Specifications of UMD5NTR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 30mA, 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K, 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW, 120mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
∗ Transition frequency of the device
∗ Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
Parameter
Parameter
Parameter
Symbol
I
C(Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Symbol
Symbol
V
R
V
R
V
V
V
V
I
I
O(off)
O(off)
R
R
O(on)
G
2
O(on)
G
2
I(off)
I(on)
f
I(off)
I(on)
f
I
I
/R
/R
T
T
I
I
1
1
I
I
1
1
DTr1(DTC144E)
Min.
32.9
Min.
−2.5
3.29
150(TOTAL)
0.8
1.7
68
30
−10 to +40
−
3
−
−
−
−
−
−
−
−
−
100
50
30
Typ.
Typ.
−0.1
250
250
0.1
4.7
2.1
47
−
−
−
−
−
1
−
−
−
−
−
−55 to +150
Max.
Max.
0.18
61.1
−0.3
−0.3
−1.8
−0.5
6.11
0.5
0.3
0.5
1.2
2.6
−
−
−
−
−
−
Limits
150
MHz
MHz
Unit
Unit
mA
mA
µA
kΩ
µA
kΩ
V
V
−
−
V
V
−
−
DTr2(DTC143X)
120(1ELEMENT)
V
V
I
V
V
V
V
V
V
I
V
V
V
V
−20 to +7
O
O
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
/I
/I
=5V
=−5V
−100
−100
=0.3V, I
=5V, I
=−0.3V, I
=−5V, I
−50
I
I
=10mA/0.5mA
=10V, I
=−10mA/−0.5mA
=−10V, I
=5V, I
=50V, V
=−5V, I
=−50V, V
O
O
=5mA
O
O
=100µA
E
O
=−10mA
Conditions
Conditions
=2mA
I
O
=−5mA, f=100MHz
=−100µA
E
=0V
=−20mA
I
=5mA, f=100MHz
=0V
−
−
−
−
Unit
mW
mA
°C
°C
V
V
EMD5 / UMD5N
∗
∗
Rev.A
2/4