MUN5216DW1T1G ON Semiconductor, MUN5216DW1T1G Datasheet - Page 14
![TRANS BRT NPN DUAL 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5216DW1T1G
Manufacturer Part Number
MUN5216DW1T1G
Description
TRANS BRT NPN DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5213DW1T1G.pdf
(20 pages)
Specifications of MUN5216DW1T1G
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
4.7kohm
No. Of Pins
6
Power Dissipation Pd
187mW
Transistor Polarity
NPN
Rohs Compliant
Yes
Rf Transistor Case
SOT-363
Dc Collector Current
100mA
Dc Current Gain Min (hfe)
160
Continuous Collector Current Max
100mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5216DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
500
Company:
Part Number:
MUN5216DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5216DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
0.01
6
5
4
3
2
1
0
0.1
0
1
0
5
I
C
−25°C
/I
V
B
R
10
Figure 44. Output Capacitance
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 42. V
15
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G
25°C
20
20
75°C
25
0.1
CE(sat)
10
1
0
Figure 46. Input Voltage versus Output Current
30
T
30
75°C
A
versus I
= −25°C
35
10
I
f = 1 MHz
I
T
C
E
40
25°C
A
, COLLECTOR CURRENT (mA)
C
= 0 V
40
= 25°C
http://onsemi.com
45
20
50
50
14
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 45. Output Current versus Input Voltage
75°C
V
1
O
= 0.2 V
40
T
2
A
Figure 43. DC Current Gain
I
= −25°C
C
V
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
25°C
3
A
= −25°C
50
4
5
10
75°C
25°C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10