EMD5DXV6T5G ON Semiconductor, EMD5DXV6T5G Datasheet - Page 5

• Manufacturer Part Number: EMD5DXV6T5G
• Description: TRANS BRT NPN/PNP DL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMD5DXV6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K, 47K
• Resistor - Emitter Base (r2) (ohms): 10K, 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.01
0.1
12
10
1
8
6
4
0
2
0
0
I
C
5
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6T1 PNP TRANSISTOR
/I
B
10
= 10
Figure 4. Output Capacitance
10
V
Figure 2. V
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
20
15
20
CE(sat)
30
SERIES 1
25
versus I
T
40
A
30
EMD5DXV6T1, EMD5DXV6T5
= 75 C
−25 C
C
f = 1 MHz
I
T
E
35
A
= 0 mA
= 25 C
50
25 C
http://onsemi.com
40
60
45
5
1000
0.01
100
100
0.1
10
10
1
1
1
0
Figure 5. Output Current versus Input Voltage
75 C
V
CE
T
A
= 10 V
= −25 C
2
25 C
Figure 3. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
4
T
A
= 75 C
−25 C
6
100
8
25 C
V
10
O
= 5 V
1000
12