EMC4DXV5T1G ON Semiconductor, EMC4DXV5T1G Datasheet - Page 4

• Manufacturer Part Number: EMC4DXV5T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC4DXV5T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: EMC4DXV5T1GOS

0.01
0.1
4
3
2
1
0
10
1
0
0
I
C
/I
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
B
10
= 10
Figure 4. Output Capacitance
Figure 2. V
V
R
I
C
, REVERSE BIAS VOLTAGE (V)
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
T
A
100
= -25°C
0.1
10
1
0
versus I
30
Figure 6. Input Voltage versus Output Current
V
O
= 0.2 V
10
C
40
f = 1 MHz
l
T
E
40
A
= 0 mA
I
= 25°C
C
, COLLECTOR CURRENT (mA)
25°C
75°C
T
http://onsemi.com
A
= -25°C
50
20
75°C
50
4
0.001
1000
100
0.01
10
100
0.1
30
10
25°C
1
1
0
Figure 5. Output Current versus Input Voltage
1
75°C
40
2
Figure 3. DC Current Gain
25°C
I
C
, COLLECTOR CURRENT (mA)
3
T
V
50
A
in
= -25°C
, INPUT VOLTAGE (V)
4
10
5
6
7
T
A
= 75°C
V
8
CE
V
O
= 10 V
= 5 V
-25°C
9
25°C
100
10