MMBT3906SL Fairchild Semiconductor, MMBT3906SL Datasheet
MMBT3906SL
Manufacturer Part Number
MMBT3906SL
Description
TRANS GP PNP 40V 200MA SOT-923F
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT3906SL.pdf
(4 pages)
Specifications of MMBT3906SL
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
227mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-923F
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
227 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3906SL
MMBT3906SLTR
MMBT3906SLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3906SL
Manufacturer:
Fairchild Semiconductor
Quantity:
65 798
© 2007 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.0.0
MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra small surface mount package for all types(max 0.43mm tall)
• Suitable for general switching & amplification
• Well suited for portable application
• As complementary type, NPN MMBT3904SL is recommended.
• Pb free
Absolute Maximum Ratings
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
* Minimum land pad.
Electrical Characteristics*
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
V
V
V
I
T
T
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
P
R
BV
BV
BV
I
h
V
V
f
C
C
t
t
t
t
C
CEX
T
d
r
s
f
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
θJA
ob
ib
Symbol
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Collector Power Dissipation, by R
Thermal Resistance, Junction to Ambient
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
θJA
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CE
CB
EB
CC
= -10μA, I
= -10μA, I
= -1mA, I
= -10mA, I
= -50mA, I
= -10mA, I
= -50mA, I
=- I
= -0.5V, I
= -30V, V
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= -20V, I
= -5V, I
= -3V, I
B2
1
Test Condition
= -1mA
C
C
C
C
C
B
E
C
C
E
=- 0.1mA
= -1mA
= -10mA
= -50mA
= -100mA
B
B
B
B
C
= 0
= 0, f = 1MHz
C
= -10mA
EB(OFF)
= 0
= 0
= -1mA
= -5mA
= -1mA
= -5mA
= -10mA, f = 100MHz
= 0, f = 1MHz
=-0.3V
-55 ~ 150
Value
Max
200
150
227
550
-40
-40
-5
C
Min.
-0.65
100
250
-40
40
60
80
60
30
-5
SOT-923F
Max.
-0.25
-0.85
-0.95
-0.4
300
225
-50
7.0
15
35
35
75
Marking : AB
February 2008
www.fairchildsemi.com
B
Unit
Unit
°C/W
mW
mA
°C
°C
V
V
V
Unit
MHz
nA
pF
pF
ns
ns
ns
ns
E
V
V
V
V
V
V
V
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MMBT3906SL Summary of contents
Page 1
... Rise Time r t Storage Time s t Fall Time Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.0 25°C unless otherwise noted a T =25°C unless otherwise noted a θJA T =25°C unless otherwise noted ...
Page 2
... Figure 3. Base- Emitter Saturation Voltage 1000 100 10 Collector Current, [mA] Figure 5. Collector- Base Capacitance Base- Collector Reverse Voltage, V © 2007 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.0.0 Figure 2. Collector-Emitter Saturation Voltage 1000 o C Vce= = 100 100 Figure 4. Collector- Base Leakage Current 100 Ic=10* = ...
Page 3
... Case Material(Molded Plastic): KTMC1060SC • UL Flammability classification rating : “V0” • Moisture Sensitivity level per JESD22-A1113B : MSL 1 • Lead terminals solderable per MIL-STD7502026 /JESD22A121 • Lead Free Plating : Pure Tin(Matte) © 2007 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.0.0 SOT-923F 3 Dimensions in Millimeters www.fairchildsemi.com ...
Page 4
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT3906SL Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...