MMBTA28-7-F Diodes Inc, MMBTA28-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBTA28-7-F
• Description: TRANS BIPO NPN DARL 80V SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBTA28-7-F

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Collector Emitter Voltage V(br)ceo: 80V
• Gain Bandwidth Ft Typ: 125MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 500mA
• Dc Current Gain Hfe: 10000
• Rohs Compliant: Yes
• Transition Frequency Typ Ft: 125MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBTA28-FDITR

DS30367 Rev. 9 - 2
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V
CE
25
CE
Fig. 5 Typical Gain Bandwidth Product
= 5V
Fig. 3 Typical Base-Emitter Voltage
T , AMBIENT TEMPERATURE (°C)
= 5V
I , COLLECTOR CURRENT (mA)
C
A
Fig. 1 Max Power Dissipation vs.
COLLECTOR CURRENT I (mA)
50
vs. Collector Current
Ambient Temperature
vs. Collector Current
1
75
100
10
125
10
T = 25°C
T = -50°C
T = 150°C
A
A
A
C
150
175 200
100
100
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0.8
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0.1
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0
1
Fig. 2 Typical Collector-Emitter Saturation Voltage
1
I
I
C
B
V
= 1000
CE
I , COLLECTOR CURRENT (mA)
= 5V
C
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical DC Current Gain
vs. Collector Current
10
10
vs. Collector Current
T = 25°C
T = -50°C
A
T = 150°C
A
A
T = -50°C
A
T = 25°C
A
100
T = 150°C
100
A
© Diodes Incorporated
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MMBTA28