DF08M-E3/45 Vishay, DF08M-E3/45 Datasheet - Page 2
![Diode Rectifier Bridge Single 800V 1A 4-Pin Case DFM Tube](/photos/16/3/160389/dfm_sml.jpg)
DF08M-E3/45
Manufacturer Part Number
DF08M-E3/45
Description
Diode Rectifier Bridge Single 800V 1A 4-Pin Case DFM Tube
Manufacturer
Vishay
Datasheet
1.DF005M-E345.pdf
(4 pages)
Specifications of DF08M-E3/45
Package
4Case DFM
Peak Average Forward Current
1@Ta=40C A
Peak Forward Voltage
1.1 V
Peak Reverse Current
5 uA
Peak Reverse Repetitive Voltage
800 V
Bridge Type
Single Phase
Configuration
Single
Diode Type
Single Phase
Package / Case
4-EDIP (0.300", 7.62mm)
Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
1A
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Product
Single Phase Bridge
Peak Reverse Voltage
800 V
Maximum Rms Reverse Voltage
560 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
8.51 mm
Width
6.5 mm
Height
3.3 mm
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Leaded Process Compatible
Yes
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
800V
Rms Voltage (max)
560V
Peak Non-repetitive Surge Current (max)
50A
Avg. Forward Curr (max)
1@Ta=40CA
Rev Curr
5uA
Forward Voltage
1.1V
Package Type
Case DFM
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Through Hole
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
DF005M thru DF10M
Vishay General Semiconductor
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum
instantaneous forward
voltage drop per diode
Maximum
reverse current at
rated DC blocking
voltage per diode
Typical junction
capacitance per diode
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
DF06M-E3/45
A
= 25 °C unless otherwise noted)
1.0
0.5
0
Figure 1. Derating Curve Output Rectified Current
20
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
40
Ambient Temperature (°C)
60
UNIT WEIGHT (g)
TEST CONDITIONS
1.0 A
T
T
4.0 V, 1 MHz
(1)
A
A
80
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
= 25 °C
= 125 °C
0.416
For technical questions within your region, please contact one of the following:
100
60 Hz
Resistive or
Inductive Load
120
PREFERRED PACKAGE CODE
SYMBOL
SYMBOL
140 150
A
R
R
V
C
I
= 25 °C unless otherwise noted)
θJA
θJL
R
F
J
A
= 25 °C unless otherwise noted)
DF005M
DF005M
45
DF01M
DF01M
Figure 2. Maximum Non-Repetitive Peak Forward Surge
60
50
40
30
20
10
0
DF02M
DF02M
BASE QUANTITY
1
50
DF04M
DF04M
500
1.1
5.0
25
40
15
Number of Cycles at 60 Hz
Current Per Diode
1.0 Cycle
DF06M
DF06M
10
T
Single Sine-Wave
DF08M
DF08M
DELIVERY MODE
J
Document Number: 88571
= 150 °C
Tube
Revision: 14-Jan-08
DF10M
DF10M
100
UNIT
UNIT
°C/W
µA
pF
V