ZXTP2012ZTA Diodes Zetex, ZXTP2012ZTA Datasheet - Page 4

• Manufacturer Part Number: ZXTP2012ZTA
• Description: TRANS PNP LO SAT 60V 4.3A SOT89
• Manufacturer: Diodes Zetex

Specifications of ZXTP2012ZTA

• Transistor Type: PNP
• Current - Collector (ic) (max): 4.3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 215mV @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 1V
• Power - Max: 1.5W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 7V
• Collector Current (dc) (max): 4.3A
• Dc Current Gain (min): 100
• Power Dissipation: 2.1W
• Frequency (max): 120MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: ZXTP2012ZTR

ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width
ZXTP2012Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
OBO
FE
CBO
CER
CEO
EBO
1k
300 s; duty cycle
= 25°C unless otherwise stated)
4
MIN.
-100
-100
100
100
-60
45
10
-7
-120
-120
-950
-840
TYP.
-8.1
-160
250
120
200
370
-80
-14
-50
-75
48
39
90
25
1
1
1
2%.
-1050
MAX. UNIT CONDITIONS
-950
-0.5
-110
-215
-0.5
-20
-20
-10
-20
300
-65
MHz I
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=-1A, I
=-2A, I
=-5A, I
=-2A, V
=-5A, V
=-10A, V
=-100 A
=-1 A, RB 1k
=-10mA*
=-100 A
=-0.1A, I
=-5A, I
=-5A, V
=-10mA, V
=-100mA, V
=-1A, V
=I
=-80V,T
=-80V,T
=-6V
=-80V
=-80V
=-10V, f=1MHz*
ISSUE 1 - JUNE 2005
B2
=-100mA
B
B
B
CE
CE
B
=-100mA*
=-200mA*
=-500mA*
CE
CC
CE
=-500mA*
amb
amb
B
=-1V*
=-1V*
=-10mA*
=-1V*
=-1V*
=-10V,
CE
CE
=100 C
=100 C
=-1V*
=-10V