2SD1767T100R Rohm Semiconductor, 2SD1767T100R Datasheet
2SD1767T100R
Manufacturer Part Number
2SD1767T100R
Description
TRANS NPN 80V 0.7A SOT-89
Manufacturer
Rohm Semiconductor
Datasheet
1.2SD1859TV2Q.pdf
(3 pages)
Specifications of 2SD1767T100R
Transistor Type
NPN
Current - Collector (ic) (max)
700mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 100mA, 3V
Power - Max
2W
Frequency - Transition
120MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Bce Npn
Transistor Polarity
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
500mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-89
No. Of
RoHS Compliant
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.7 A
Maximum Dc Collector Current
1 A
Power Dissipation
2 W
Maximum Operating Frequency
120 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
120 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SD1767T100R
2SD1767T100RTR
2SD1767T100RTR
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
1) High breakdown voltage, BV
2) Complements the 2SB1189 / 2SB1238.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 Pw=10ms, duty=1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Features
Absolute maximum ratings (Ta=25°C)
Packaging specifications and h
Denot es h
Electrical characteristics (Ta=25°C)
high current, I
Basic ordering unit (pieces)
FE
Package
Parameter
Marking
Type
Code
h
FE
Parameter
C
2SD1767
2SD1859
=0.7A.
2SD1767
Symbol
MPT3
PQR
DC
T100
1000
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
∗
C
CEO
2
or larger.
Symbol
V
BV
BV
BV
=80V, and
Cob
2SD1859
I
I
CE(sat)
−55 to +150
h
FE
CBO
EBO
f
FE
2500
CBO
CEO
EBO
T
ATV
TV2
QR
Limits
−
150
0.7
0.5
80
80
5
1
2
1
∗2
∗3
Min.
120
80
80
5
−
−
−
−
−
A(Pulse)
A(DC)
Unit
W
°C
°C
V
V
V
Typ.
120
0.2
10
−
−
−
−
−
−
∗1
Max.
390
0.5
0.5
0.4
−
−
−
−
−
MHz
Unit
µA
µA
pF
V
V
V
V
−
External dimensions (Unit : mm)
2SD1767
ROHM : MPT3
EIAJ : SC-62
2SD1859
ROHM : ATV
I
I
I
V
V
I
V
V
V
C
C
E
C
=50µA
CB
EB
CE
CE
CB
=50µA
=2mA
/I
0.65Max.
B
=50V
=4V
/I
=10V, I
=10V, I
=500mA/50mA
C
=3V/0.1A
( 1 )
E
E
2.54
=−50mA, f=100MHz
=0A, f=1MHz
( 2 )
6.8
2.54
( 3 )
1.0
2SD1767 / 2SD1859
Conditions
0.5
( 1 )
( 2 )
( 3 )
4.0
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
2.5
1.05
Taping specifications
0.5
2.5
0.45
Rev.A
1/2
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2SD1767T100R Summary of contents
Page 1
Transistors Medium power transistor (80V, 0.7A) 2SD1767 / 2SD1859 Features 1) High breakdown voltage, BV =80V, and CEO high current, I =0.7A Complements the 2SB1189 / 2SB1238. Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage V CBO Collector-emitter ...
Page 2
Transistors Electrical characteristics curves Ta=25°C 1.0 10mA 9mA 5mA 8mA 0.8 4mA 3mA 0.6 2mA 0.4 1mA 0.2 = (V) COLLECTOR TO EMITTER VOLTAGE : V CE Fig.1 Ground emitter output ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...