2N3019 STMicroelectronics, 2N3019 Datasheet
2N3019
Specifications of 2N3019
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2N3019 Summary of contents
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... DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency application. It feature high gain and low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Collector-Base Voltage (I CBO V Collector-Emitter Voltage (I CEO V Emitter-Base Voltage (I EBO ...
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... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) ...
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... TO-39 MECHANICAL DATA DIM. MIN TYP. MAX. MIN. 0.500 0.49 6.6 8.5 9.4 0.200 1.2 0 (typ 2N3019 inch TYP. MAX. 0.019 0.260 0.334 0.370 0.047 0.035 A P008B 3/4 ...
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... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...