BUL742C STMicroelectronics, BUL742C Datasheet

TRANSISTOR POWER NPN TO-220

BUL742C

Manufacturer Part Number
BUL742C
Description
TRANSISTOR POWER NPN TO-220
Manufacturer
STMicroelectronics
Datasheets

Specifications of BUL742C

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1A, 3.5A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 800mA, 3V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation Pd
70W
Dc Collector Current
3.5A
Dc Current Gain Hfe
48
Transistor Case Style
TO-220
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-7208-5
BUL742C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUL742C
Manufacturer:
SANKEN
Quantity:
3 000
Part Number:
BUL742C
Manufacturer:
ST
0
Part Number:
BUL742C
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
BUL742C
Quantity:
2 900
Part Number:
BUL742CFP/
Manufacturer:
ST
0
APPLICATIONS:
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an
intrinsic ruggedness which enables the transistor to
withstand an high collector current level during
breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
April 2003
BUL742C
Ordering Code
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLAST FOR FLUORESCENT
LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
I
P
T
I
CES
CEO
EBO
CM
BM
I
I
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
BUL742C
Marking
Parameter
TO-220 / Tube
p
c
Package / Shipment
< 5 ms)
= 25 °C
C
p
= 0, I
< 5 ms)
B
BE
= 0)
B
= 0)
HIGH VOLTAGE FAST-SWITCHING
< 2 A, t
p
< 10 ms)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
–65 to 150
V
Value
(BR)EBO
1050
TO-220
400
150
70
4
8
2
4
1
BUL742C
2
3
Unit
°C
°C
W
V
V
V
A
A
A
A
1/7

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BUL742C Summary of contents

Page 1

... T Storage Temperature stg T Max. Operating Junction Temperature j April 2003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Package / Shipment TO-220 / Tube Parameter = < < < 5 ms) p < °C c BUL742C TO-220 INTERNAL SCHEMATIC DIAGRAM Value 1050 400 V (BR)EBO –65 to 150 150 Unit °C °C ...

Page 2

... BUL742C THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V * Base-Emitter BE(sat) Saturation Voltage Current Gain ...

Page 3

... Safe Operating Area Output Characteristics DC Current Gain Derating Curve DC Current Gain Collector-Emitter Saturation Voltage BUL742C 3/7 ...

Page 4

... BUL742C Base-Emitter Saturation Voltage Resistive Load Switching Off Times Resistive Load Switching Off Times 4/7 Resistive Load Switching On Times Resistive Load Switching On Times Reverse Biased Safe Operating Area ...

Page 5

... Figure 1: Resistive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor Figure 2: Energy Rating Test Circuit BUL742C 5/7 ...

Page 6

... BUL742C DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 6/7 TO-220 MECHANICAL DATA mm TYP. MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5 ...

Page 7

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