BUL742C STMicroelectronics, BUL742C Datasheet - Page 3

• Manufacturer Part Number: BUL742C
• Description: TRANSISTOR POWER NPN TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL742C

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 3.5A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 800mA, 3V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 400V
• Power Dissipation Pd: 70W
• Dc Collector Current: 3.5A
• Dc Current Gain Hfe: 48
• Transistor Case Style: TO-220
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-7208-5; BUL742C

BUL742C, BULB742C
2
Electrical characteristics
T
Table 4.
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
V
case
V
V
V
CEO(sus)
Symbol
CE(sat)
BE(sat)
(BR)EBO
h
I
I
FE
CEO
E
CES
t
t
= 25°C unless otherwise specified.
s
ar
f
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Collector cut-off current
(I
Emitter base breakdown
voltage (I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Storage time
Fall time
Repetitive avalanche
energy
B
B
BE
= 0)
= 0)
= 0)
Parameter
C
= 0)
Doc ID 9488 Rev 4
V
V
I
I
I
I
I
I
I
I
I
t
L = 2 mH
V
E
C
C
C
C
C
C
C
B1
p
CE
CE
BE(off)
= 300 µs V
= 1 mA
= 10 mA
= 1 A
= 3.5 A
= 3.5 A
= 0.1 A
= 0.8 A
= 2 A
= - I
= 1050 V
= 400 V
Test conditions
B2
= -5 V
= 400 mA
_
_ _
_
_
BE(off)
V
CC
C = 1.8 nF
V
V
I
I
I
B
B
B
= - 5 V
CE
CE
= 125 V
= 0.2 A
= 1 A
= 1 A
= 5 V
= 3 V
Min.
Electrical characteristics
400
15
48
25
6
Typ.
0.15
450
350
0.2
0.6
1.1
2.4
10
19
75
35
Max.
250
100
500
0.5
1.5
1.5
3.5
10
24
50
Unit
mJ
µA
µA
µs
ns
V
V
V
V
V
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