BU508AW STMicroelectronics, BU508AW Datasheet - Page 4

• Manufacturer Part Number: BU508AW
• Description: TRANS NPN HV CRT 700V 8A TO-247
• Manufacturer: STMicroelectronics

Specifications of BU508AW

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 700V
• Vce Saturation (max) @ Ib, Ic: 1V @ 1.6A, 4.5A
• Current - Collector Cutoff (max): 200µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 100mA, 5V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 700 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 700V
• Power Dissipation Pd: 125W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 10
• Operating Temperature Range: -65°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7196-5; BU508AW

Electrical characteristics
2
4/11
(T
Table 4.
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
V
Electrical characteristics
V
V
CEO(sus)
case
Symbol
CE(sat)
BE(sat)
h
I
I
FE
CES
EBO
t
t
s
f
= 25°C unless otherwise specified)
(1)
(1)
(1)
(1)
Electrical characteristics
Collector cut-off current
(V
Emitter cut-off current
(I
Collector-emitter
sustaining voltage
(I
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
C
C
BE
=0)
=0)
=0)
Parameter
V
V
V
I
I
I
I
I
I
V
L
C
C
C
C
C
C
BB(off)
CE
CE
EB
BE(off)
= 100mA
= 4.5A
= 4.5A
= 0.1A
= 4.5A
= 4.5A
= 1500V
= 1500V;
= 9V
Test conditions
= 4.5µH
= -2.7V f
I
B(on)
T
h
C
V
V
I
= 16KHz
= 125°C
B
CE
CE
I
= 1.6A
= 0.5A
B
= 2A
= 5V
= 5V
Min.
700
10
5
Typ.
2.5
0.2
Max.
0.2
1.1
30
2
1
1
BU508AW
Unit
mA
mA
mA
µs
µs
V
V
V