2SA1943-O(Q) Toshiba, 2SA1943-O(Q) Datasheet

TRANS PNP -230V -15A 2-21F1A

2SA1943-O(Q)

Manufacturer Part Number
2SA1943-O(Q)
Description
TRANS PNP -230V -15A 2-21F1A
Manufacturer
Toshiba
Datasheet

Specifications of 2SA1943-O(Q)

Transistor Type
PNP
Current - Collector (ic) (max)
15A
Voltage - Collector Emitter Breakdown (max)
230V
Vce Saturation (max) @ Ib, Ic
3V @ 800mA, 8A
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 1A, 5V
Power - Max
150W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
2-21F1A (TO-247 L)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
230 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
15 A
Power Dissipation
150000 mW
Dc Collector/base Gain Hfe Min
80
Maximum Operating Frequency
30 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SA1943-OQ
Power Amplifier Applications
Absolute Maximum Ratings
High collector voltage: V
Complementary to 2SC5200
Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Triple Diffused Type
CEO
= −230 V (min)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1943
j
−55 to 150
Rating
−230
−230
−1.5
−15
150
150
−5
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
2-21F1A
2006-11-09
2SA1943
Unit: mm

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2SA1943-O(Q) Summary of contents

Page 1

... Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2SA1943 (Ta = 25°C) Symbol Rating Unit V −230 V CBO V −230 V CEO V −5 V EBO I − −1 150 150 ° −55 to 150 °C stg 1 2SA1943 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 g (typ.) 2006-11-09 ...

Page 2

... − − − MHz Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SA1943 Min Typ. Max Unit ― ― −5.0 μA ― ― −5.0 μA −230 ― ― ― 160 35 60 ― ― −1.5 − ...

Page 3

... I C max (continuous) −10 −5 −3 −1 −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C −0.1 Curves must be derated linearly with increase in −0.05 temperature. −0.03 −2 Collector-emitter voltage V 3 2SA1943 I – 100°C −25 −0.4 −0.8 −1.2 −1.6 −2.0 Base-emitter voltage V ( – I ...

Page 4

... Pulse width t r – Infinite heat sink Curves should be applied in thermal limited area. (single nonrepetitive pulse 100 ( 2SA1943 1000 2006-11-09 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SA1943 20070701-EN 2006-11-09 ...

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