BC817-16LT1G ON Semiconductor, BC817-16LT1G Datasheet - Page 2
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BC817-16LT1G
Manufacturer Part Number
BC817-16LT1G
Description
TRANS NPN GP 500MA 45V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.BC817-16LT1G.pdf
(10 pages)
Specifications of BC817-16LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
100 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC817-16LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON Semiconductor
Quantity:
28 263
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON
Quantity:
30 000
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
BC817−16LT1G
BC817−16LT3G
BC817−25LT1G
BC817−25LT3G
BC817−40LT1G
BC817−40LT3G
(I
(V
(I
(V
(V
(I
(I
(I
(I
(I
(V
C
E
C
C
C
C
C
EB
CB
CB
CB
= 10 mA)
= 1.0 mA)
= 100 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 10 mA, V
Device
= 0, I
= 20 V)
= 20 V, T
= 10 V, f = 1.0 MHz)
C
= 10 mA)
A
CE
B
CE
CE
CE
= 150°C)
= 50 mA)
= 5.0 Vdc, f = 100 MHz)
= 1.0 V)
= 1.0 V)
= 1.0 V)
Characteristic
Specific Marking
(T
A
= 25°C unless otherwise noted)
6A
6B
6C
http://onsemi.com
BC817−16
BC817−25
BC817−40
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
SOT−23
V
V
V
Symbol
V
V
(BR)CEO
(BR)CES
(BR)EBO
CE(sat)
C
I
BE(on)
CBO
h
f
obo
FE
T
Min
100
160
250
100
5.0
45
50
40
−
−
−
−
−
Typ
10,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
10
−
−
−
−
−
−
−
−
−
−
−
−
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Shipping
Max
100
250
400
600
5.0
0.7
1.2
−
−
−
−
−
−
†
MHz
Unit
nA
mA
pF
V
V
V
−
V
V