BC817-16LT1G ON Semiconductor, BC817-16LT1G Datasheet - Page 8
![TRANS NPN GP 500MA 45V SOT23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BC817-16LT1G
Manufacturer Part Number
BC817-16LT1G
Description
TRANS NPN GP 500MA 45V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.BC817-16LT1G.pdf
(10 pages)
Specifications of BC817-16LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
225mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
100 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC817-16LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON Semiconductor
Quantity:
28 263
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
BC817-16LT1G
Manufacturer:
ON
Quantity:
30 000
1.0
0.8
0.6
0.4
0.2
0
0.01
T
J
= 25°C
I
C
= 10 mA
Figure 21. Saturation Region
0.1
I
B
, BASE CURRENT (mA)
100 mA
1
100
300 mA
10
1
TYPICAL CHARACTERISTICS − BC817−40LT1
0.1
10
500 mA
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1
100
8
C
+1
ib
-1
-2
0
10
1
Figure 22. Temperature Coefficients
q
VC
for V
C
ob
I
C
, COLLECTOR CURRENT (mA)
CE(sat)
q
100
VB
10
for V
BE
100
1000