MMBT5089LT1G ON Semiconductor, MMBT5089LT1G Datasheet - Page 2
MMBT5089LT1G
Manufacturer Part Number
MMBT5089LT1G
Description
TRANS GP SS NPN 25V LN SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT5088LT1G.pdf
(5 pages)
Specifications of MMBT5089LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
500mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 100µA, 5V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
4.5 V
Continuous Collector Current
0.05 A
Maximum Dc Collector Current
0.05 A
Power Dissipation
225 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
400 at 0.1 mA at 5 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
4.5V
Collector Current (dc) (max)
50mA
Dc Current Gain (min)
400
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5089LT1GOS
MMBT5089LT1GOS
MMBT5089LT1GOSTR
MMBT5089LT1GOS
MMBT5089LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5089LT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
MMBT5089LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBT5089LT1G
Manufacturer:
ONSemicon
Quantity:
2 733
Part Number:
MMBT5089LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain — Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Small Signal Current Gain
Noise Figure
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
CB
CB
EB(off)
EB(off)
CB
EB
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 500 mAdc, V
= 1.0 mAdc, V
= 100 mAdc, V
= 20 Vdc, I
= 15 Vdc, I
= 5.0 Vdc, I
= 0.5 Vdc, I
= 3.0 Vdc, I
= 4.5 Vdc, I
B
B
E
E
B
E
CE
E
C
CE
CE
CE
CE
CE
= 1.0 mAdc)
= 1.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz emitter guarded)
= 0, f = 1.0 MHz collector guarded)
C
C
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 20 MHz)
= 5.0 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
= 0)
= 0)
Characteristic
S
= 10 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
R
S
Figure 1. Transistor Noise Model
e
n
http://onsemi.com
i
n
2
TRANSISTOR
IDEAL
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
I
CE(sat)
BE(sat)
I
h
C
CBO
EBO
C
NF
h
f
FE
T
cb
eb
fe
Min
300
400
350
450
300
400
350
450
30
25
35
30
50
−
−
−
−
−
−
−
−
−
−
1200
1400
1800
Max
100
900
0.5
0.8
4.0
3.0
2.0
50
50
50
10
−
−
−
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−