PZT3904T1G ON Semiconductor, PZT3904T1G Datasheet - Page 7

• Manufacturer Part Number: PZT3904T1G
• Description: TRANS GP NPN 200MA 40V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT3904T1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 1.5W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 200mA
• Power Dissipation: 1.5W
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: PZT3904T1GOSTR

PZT3904T1G
TYPICAL CHARACTERISTICS
1
10 ms
1.0 s
0.1
0.01
1
10
100
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 19. Safe Operating Area
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