TIP31CG ON Semiconductor, TIP31CG Datasheet - Page 4

TRANS NPN 3A 100V HI PWR TO220AB

TIP31CG

Manufacturer Part Number
TIP31CG
Description
TRANS NPN 3A 100V HI PWR TO220AB
Manufacturer
ON Semiconductor
Type
Powerr
Datasheets

Specifications of TIP31CG

Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
300µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage(max)
100V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
3A
Dc Current Gain (min)
25
Power Dissipation
2W
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
Dc Collector/base Gain Hfe Min
25
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
3 A
Current, Gain
50
Frequency
3 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
3.125 °C/W
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
1.2 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP31CGOS

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Manufacturer
Quantity
Price
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5.0
2.0
1.0
0.5
0.2
0.1
10
0.07
0.05
0.03
0.07
0.05
0.03
0.02
0.01
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.7
0.5
0.3
0.2
0.1
5.0
0.03
0.01
CURVES APPLY
BELOW RATED V
Figure 5. Active Region Safe Operating Area
V
0.01
CE
t
f
0.05
@ V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.02
D = 0.5
CC
t
SECONDARY BREAKDOWN
LIMITED @ T
THERMAL LIMIT @ T
(SINGLE PULSE)
BONDING WIRE LIMIT
0.07
f
0.05
0.02
@ V
0.2
0.1
10
I
= 10 V
SINGLE PULSE
C
, COLLECTOR CURRENT (AMP)
0.1
CC
Figure 6. Turn−Off Time
CEO
0.05
= 30 V
J
≤ 150°C
0.2
20
1.0
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
C
0.3
t
5.0 ms
= 25°C
s
0.2
0.5
0.7
50
0.5
1.0
1.0 ms
Figure 4. Thermal Response
I
I
t
T
B1
C
s
100 ms
J
′ = t
/I
= 25°C
B
= I
= 10
s
B2
1.0
- 1/8 t
http://onsemi.com
2.0 3.0
100
f
2.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
300
200
100
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
70
50
30
5.0
qJC(t)
J(pk)
qJC
0.1
(t) = 3.125°C/W MAX
- T
= r(t) R
C
10
0.2
= P
qJC
(pk)
0.3
1
J(pk)
V
Z
R
20
qJC(t)
, REVERSE VOLTAGE (VOLTS)
0.5
Figure 7. Capacitance
may be calculated from the data in
1.0
50
2.0 3.0
P
DUTY CYCLE, D = t
100
(pk)
C
t
5.0
1
eb
J(pk)
200
t
2
= 150°C; T
10
T
1
/t
500
J
2
= + 25°C
20
C
− V
C
30
cb
1.0 k
J(pk)
C
40
CE
is

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