TIP30CG ON Semiconductor, TIP30CG Datasheet - Page 4

• Manufacturer Part Number: TIP30CG
• Description: TRANS PNP 1A 100V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of TIP30CG

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 125mA, 1A
• Current - Collector Cutoff (max): 300µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 1A, 4V
• Power - Max: 2W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 2 W
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 40
• Current, Collector: 1 A
• Current, Gain: 75
• Frequency: 3 MHz
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 4.167 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.7 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 40
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP30CGOS

APPROX
V
+11 V
APPROX
EB(off)
3.0
0.1
0.1
10
500
300
100
7.0
5.0
+11 V
70
50
30
10
1.0
V
0.03
V
in
in
CURVES APPLY BELOW
RATED V
0
Figure 5. Active Region Safe Operating Area
TURN-OFF PULSE
TURN-ON PULSE
Figure 3. Switching Time Equivalent Circuit
T
J
0.05
= 150°C
T
V
J
CEO
CE
= 150°C
0.07
25°C
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ T
BONDING WIRE LIMITED
, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
t
t
1
2
- 55°C
Figure 1. DC Current Gain
0.1
I
4.0
C
, COLLECTOR CURRENT (AMP)
t
3
100 < t
DUTY CYCLE ≈ 2.0%
APPROX - 9.0 V
t
V
t
1
3
CC
V
≤ 7.0 ns
< 15 ns
in
2
10
< 500 ms
0.3
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
R
DESIRED CURRENT LEVELS.
C
B
= 25°C
0.5
C
and R
20
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
R
jd
B
<< C
0.7
C
R
VARIED TO OBTAIN
C
eb
- 4.0 V
1.0
dc
40
V
1 ms
CE
= 2.0 V
http://onsemi.com
5 ms
100
SCOPE
3.0
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
0.07
0.05
0.03
0.07
0.05
0.03
0.02
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
2.0
1.0
0.7
0.5
0.3
0.1
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0.03
0.03
t
f
0.05
0.05
@ V
t
r
@ V
CC
0.07
0.07
t
f
= 10 V
CC
@ V
t
r
0.1
0.1
I
@ V
I
= 10 V
C
Figure 2. Turn-Off Time
C
Figure 4. Turn-On Time
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
CC
CC
= 30 V
= 30 V
0.2
t
0.3
0.3
d
t
s
@ V
′
EB(off)
0.5
0.5
J(pk)
0.7
= 2.0 V
0.7
1.0
1.0
= 150°C; T
I
I
t
T
B1
C
s
J
′ = t
/I
I
T
= 25°C
C
B
= I
J
/I
= 10
= 25°C
s
B
B2
- 1/8 t
= 10
C
2.0
- V
J(pk)
f
C
3.0
3.0
CE
is