MJE13009G ON Semiconductor, MJE13009G Datasheet - Page 3

• Manufacturer Part Number: MJE13009G
• Description: TRANS PWR NPN 12A 400V TO220AB
• Manufacturer: ON Semiconductor

Specifications of MJE13009G

• Transistor Type: NPN
• Current - Collector (ic) (max): 12A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 3V @ 3A, 12A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5A, 5V
• Power - Max: 2W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 12 A
• Power Dissipation: 12 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 12 A
• Dc Collector/base Gain Hfe Min: 8
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 400V
• Collector-base Voltage: 700V
• Emitter-base Voltage: 9V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 8
• Frequency (max): 4MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJE13009GOS

The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
0.05
0.02
0.01
100
0.8
0.6
0.4
0.2
0.5
0.2
0.1
50
20
10
0.07
0.05
0.03
0.02
0.01
1
0
5
2
1
0.7
0.5
0.3
0.2
0.1
20
1
0.01
5
Figure 1. Forward Bias Safe Operating Area
7
0.01
D = 0.5
Figure 3. Forward Bias Power Derating
T
C
40
CURVES APPLY BELOW RATED
V
0.05
0.02
0.2
0.1
0.02
= 25°C
10
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
SINGLE PULSE
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIM­
IT
T
60
DERATING
THERMAL
C
20
, CASE TEMPERATURE (°C)
0.05
V
CEO
dc
30
80
0.1
50
100
1 m­
70 100
DOWN DERATING
s
SECOND BREAK­
0.2
Figure 4. Typical Thermal Response [Z
120
0.5
100 m
200
σ
140
300
http://onsemi.com
1
10 m
σ
160
500
2
t, TIME (ms)
3
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 1 may be found at
any case temperature by using the appropriate curve on
Figure 3.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. Use of reverse biased safe
operating area data (Figure 2) is discussed in the applications
information section.
qJC(t)
J(pk)
qJC
There are two limitations on the power handling ability of
The data of Figure 1 is based on T
T
14
12
10
5
= 1.25°C/W MAX
8
6
4
2
0
J(pk)
- T
= r(t) R
0
C
= P
may be calculated from the data in Figure 4. At high
V
10
qJC
CEV
(pk)
Figure 2. Reverse Bias Switching Safe
100
1
, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
Z
T
I
qJC(t)
B1
C
C
20
≤ 100°C
= 2.5 A
≥ 25_C. Second breakdown limitations do
qJC
200
(t)]
Operating Area
300
50
3 V
P
400
(pk)
DUTY CYCLE, D = t
100
1.5
V
t
1
500
t
2
200
C
= 25_C; T
5 V
600
V
BE(off)
1
/t
2
500
700
= 9 V
C
J(pk)
− V
1.0 k
800
CE
is