MJ802G ON Semiconductor, MJ802G Datasheet

TRANS PWR NPN 90V 30A TO3

MJ802G

Manufacturer Part Number
MJ802G
Description
TRANS PWR NPN 90V 30A TO3
Manufacturer
ON Semiconductor
Type
High Powerr
Datasheets

Specifications of MJ802G

Transistor Type
NPN
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
90V
Vce Saturation (max) @ Ib, Ic
800mV @ 750mA, 7.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 7.5A, 2V
Power - Max
200W
Frequency - Transition
2MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
90 V
Emitter- Base Voltage Vebo
4 V
Maximum Dc Collector Current
30 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
30 A
Dc Collector/base Gain Hfe Min
25
Maximum Operating Frequency
2 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
30 A
Current, Gain
100
Frequency
2 MHz
Package Type
TO-204AA (TO-3)
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
0.875 °C/W
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
0.8 V
Voltage, Emitter To Base
4 V
Number Of Elements
1
Collector-emitter Voltage
90V
Collector-base Voltage
100V
Emitter-base Voltage
4V
Collector Current (dc) (max)
30A
Dc Current Gain (min)
25
Frequency (max)
2MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJ802GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ802G
Manufacturer:
ON Semiconductor
Quantity:
364
Part Number:
MJ802G
Manufacturer:
ST
0
MJ802
High−Power NPN Silicon
Transistor
amplifiers to 100−Watts music power per channel.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
This transistor is for use as an output device in complementary audio
High DC Current Gain − h
Excellent Safe Operating Area
Complement to the PNP MJ4502
Pb−Free Package is Available*
Derate above 25_C
Characteristics
Rating
C
= 25_C
FE
= 25−100 @ I
Symbol
Symbol
T
V
V
J
V
V
q
P
CEO
, T
CER
I
I
CB
EB
JC
C
B
D
stg
C
= 7.5 A
−65 to +200
Value
0.875
1.14
Max
100
100
200
4.0
7.5
90
30
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
W
MJ802
MJ802G
Device
100 VOLTS − 200 WATTS
POWER TRANSISTOR
ORDERING INFORMATION
MJ802 = Device Code
G
A
YY
WW
MEX
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
30 AMPERE
TO−204AA (TO−3)
(Pb−Free)
Package
TO−204
TO−204
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
CASE 1−07
STYLE 1
MJ802G
AYYWW
MEX
Publication Order Number:
100 Units / Tray
100 Units / Tray
Shipping
MJ802/D

Related parts for MJ802G

MJ802G Summary of contents

Page 1

... JC MJ802 MJ802G 1 http://onsemi.com 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS − 200 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ802G AYYWW MEX MJ802 = Device Code G = Pb−Free Package A = Assembly Location YY = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

T = 175° 25°C 1.0 0.7 − 55°C 0.5 0.3 0.2 DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF I 0.1 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 ...

Page 4

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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