BUL742A STMicroelectronics, BUL742A Datasheet

TRANSISTOR NPN 400V 4A TO-220

BUL742A

Manufacturer Part Number
BUL742A
Description
TRANSISTOR NPN 400V 4A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL742A

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1.5V @ 1A, 3.5A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
16 @ 800mA, 3V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
497-3130-5
APPLICATIONS
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
October 2003
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FOUR LAMP ELECTRONIC BALLAST FOR:
CONFIGURATION;
FEED CONFIGURATION.
SWITCH MODE POWER SUPPLIES
V
V
V
120 V MAINS IN PUSH-PULL
277 V MAINS IN HALF BRIDGE CURRENT
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage
(I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Storage Temperature
Max. Operating Junction Temperature
®
C
= 0, I
B
2 A, t
technology for high
Parameter
p
p
< 10 s, T
<5 ms)
p
<5 ms)
B
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
j
< 150
o
C)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
V
Value
(BR)EBO
TO-220
950
400
150
70
4
8
2
4
BUL742A
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/5

Related parts for BUL742A

BUL742A Summary of contents

Page 1

... V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL742A is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the ...

Page 2

... BUL742A THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit BUL742A 3/5 ...

Page 4

... BUL742A DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3 ...

Page 5

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL742A 5/5 ...

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