BUL742A STMicroelectronics, BUL742A Datasheet - Page 2

• Manufacturer Part Number: BUL742A
• Description: TRANSISTOR NPN 400V 4A TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL742A

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 1A, 3.5A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 16 @ 800mA, 3V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: 497-3130-5

BUL742A
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
Safe Operating Areas
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
V
R
R
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
thj-case
h
I
thj-amb
I
E
CEO
CES
FE
t
t
s
sb
f
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Collector Cut-off
Current (V
Collector Cut-off
Current (I
Collector-Emitter
Sustaining Voltage
(I
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Storage Time
Fall Time
Avalanche Energy
B
C
= 0)
= 0)
Parameter
B
BE
= 0)
= 0)
V
V
I
I
I
I
I
I
I
V
I
t
L = 2 mH
C
E
C
C
C
C
C
B1
p
CE
CE
CC
= 30 s
= 1 mA
= 10 mA
= 1 A
= 3.5 A
= 3.5 A
= 800 mA
= 10 mA
= 0.5 A
= 950 V
= 400 V
= 250 V
case
= 25
Test Conditions
o
C unless otherwise specified)
Max
Max
Derating Curve
V
V
I
I
I
(see figure 2)
I
I
(see figure 1)
L = 25 mH
C
B
B
B
B2
CE
CE
= 2.5 A
= 1 A
= 1 A
= 0.2 A
= -1 A
= 3 V
= 5 V
Min.
400
12
16
10
6
1.78
62.5
Typ.
100
0.9
Max.
100
250
0.5
1.5
1.5
24
40
o
o
Unit
C/W
C/W
mJ
ns
V
V
V
V
V
A
A
s