MC1496P ON Semiconductor, MC1496P Datasheet - Page 9

Modulator / Demodulator Balanced Mod/DeMod

MC1496P

Manufacturer Part Number
MC1496P
Description
Modulator / Demodulator Balanced Mod/DeMod
Manufacturer
ON Semiconductor
Datasheet

Specifications of MC1496P

Package / Case
PDIP-14
Maximum Operating Temperature
+ 70 C
Maximum Power Dissipation
33 mW
Minimum Operating Temperature
0 C
Modulation Type
Balanced
Mounting Style
Through Hole
Supply Current
0.005 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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2. Low−level Modulating Signal, V
3. When the output signal contains multiple frequencies, the gain expression given is for the output amplitude ofeach of the two desired outputs,
4. All gain expressions are for a single−ended output. For a differential output connection, multiply each expression by two.
5. R
6. R
7. r
8. K = Boltzmann′s Constant, T = temperature in degrees Kelvin, q = the charge on an electron.
output is the MC1496 gain parameter which is most often of
interest to the designer. This gain has significance only when
the lower differential amplifier is operated in a linear mode,
but this includes most applications of the device.
amplifier may be operated either in a linear or a saturated
mode. Approximate gain expressions have been developed
for the MC1496 for a low−level modulating signal input and
the following carrier input conditions:
frequency components contained in the output signal.
APPLICATIONS INFORMATION
basic application of the MC1496. The suggested circuit for
this application is shown on the front page of this data sheet.
MC1496 with a single dc supply voltage instead of dual
supplies. Figure 25 shows a balanced modulator designed
for operation with a single 12 Vdc supply. Performance of
this circuit is similar to that of the dual supply modulator.
AM Modulator
amplitude modulator with a minor modification.
Table 1. Voltage Gain and Output Frequencies
The gain from the modulating signal input port to the
As previously mentioned, the upper quad differential
1) Low−level dc
2) High−level dc
3) Low−level ac
4) High−level ac
These gains are summarized in Table 1, along with the
Double sideband suppressed carrier modulation is the
In some applications, it may be necessary to operate the
The circuit shown in Figure 26 may be used as an
f
C
e
L
E
= Transistor dynamic emitter resistance, at 25°C;
+ f
= Load resistance.
= Emitter resistance between Pins 2 and 3.
M
Carrier Input Signal (V
and f
High−level dc
High−level ac
Low−level dc
Low−level ac
C
− f
M
.
C
)
M
, assumed in all cases. V
Approximate Voltage Gain
2 2 KT q (R E ) 2r e )
re [
2(R E ) 2r e ) KT q
http://onsemi.com
R L V
I 5 (mA)
26 mV
C
R
R
0.637 R L
R L V
E
E
is Carrier Input Voltage.
R L
) 2r e
) 2r e
C
(rms)
C
9
operation is to adjust the carrier null potentiometer for the
proper amount of carrier insertion in the output signal.
Figure 26 does not have sufficient adjustment range.
Therefore, the modulator may be modified for AM
operation by changing two resistor values in the null circuit
as shown in Figure 27.
Product Detector
(see Figure 28).
dynamic range of 90 dB when operating at an intermediate
frequency of 9.0 MHz.
range. For operation at very low intermediate frequencies
down to 50 kHz the 0.1 mF capacitors on Pins 8 and 10 should
be increased to 1.0 mF. Also, the output filter at Pin 12 can
be tailored to a specific intermediate frequency and audio
amplifier input impedance.
resistance between Pins 2 and 3 may be increased or
decreased to adjust circuit gain, sensitivity, and dynamic
range.
introducing carrier signal at the carrier input and an AM
signal at the SSB input.
frequency signal or generated locally. The carrier signal may
All that is required to shift from suppressed carrier to AM
However, the suppressed carrier null circuitry as shown in
The MC1496 makes an excellent SSB product detector
This product detector has a sensitivity of 3.0 mV and a
The detector is broadband for the entire high frequency
As in all applications of the MC1496, the emitter
This circuit may also be used as an AM detector by
The carrier signal may be derived from the intermediate
f
Output Signal Frequency(s)
C
± f
M
, 3f
C
± f
f
C
M
f
f
± f
M
M
, 5f
M
C
± f
M
, . . .

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