BCW71 Fairchild Semiconductor, BCW71 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
BCW71
Manufacturer Part Number
BCW71
Description
TRANSISTOR NPN 45V 500MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW71_ND87Z.pdf
(4 pages)
Specifications of BCW71
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
250mV @ 500µA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
330MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Frequency
330 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
110
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
110
Frequency (max)
330MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCW71
Manufacturer:
Fairchild Semiconductor
Quantity:
30 700
Part Number:
BCW71
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BCW71,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
h
V
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
Symbol
f
C
C
NF
FE
CE(
BE(
BE(
CBO
T
(BR)CEO
(BR)CBO
(BR)EBO
Electrical Characteristics
obo
ibo
Typical Characteristics
sat
on
sat
)
400
300
200
100
)
)
0
10
Typical Pulsed Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
20
vs Collector Current
I - COLLECTOR CURRENT (mA)
C
125 °C
- 40 °C
30
Parameter
25 °C
50
100
200 300
Vce = 5V
TA = 25°C unless otherwise noted
500
I
I
I
I
C
C
C
C
I
I
I
V
V
I
f = 35 MHz
V
V
I
R
BW = 200 Hz
C
C
E
C
C
= 2.0 mA, V
= 10 mA, I
= 50 mA, I
= 2.0 mA, V
CB
CB
CE
EB
S
= 10 A, I
= 1.0 mA, I
= 10 A, I
= 10 mA, V
= 0.2 mA, V
= 2.0 k , f = 1.0 kHz,
= 20 V, I
= 20 V, I
= 10 V, I
= 0.5 V, I
Test Conditions
B
B
C
E
E
E
E
0.4
0.3
0.2
0.1
CE
CE
C
B
= 0.5 mA
= 2.5 mA
CE
= 0
= 0
CE
= 0
= 0, T
= 0, f = 1.0 MHz
= 0
= 0, f = 1.0 MHz
NPN General Purpose Amplifier
1
= 5.0 V
= 5.0 V
= 5.0 V,
= 5.0 V,
Voltage vs Collector Current
Collector-Emitter Saturation
A
= 10
= 100 C
I - COLLECTOR CURRENT (mA)
C
10
Min
110
5.0
0.6
45
50
125 °C
Typ
0.85
330
9.0
25 °C
100
Max Units
- 40 °C
0.25
0.75
100
220
4.0
10
10
(continued)
400
MHz
pF
pF
dB
V
V
V
V
V
V
A