PN3646 Fairchild Semiconductor, PN3646 Datasheet
PN3646
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PN3646 Summary of contents
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... Base-Emitter Saturation Voltage BE Small Signal Characteristics C Collector-Base Capacitance cb C Emitter-Base Capacitance eb h Small-Signal Current Gain fe * Pulse Test: Pulse Width 300 s, Duty Cycle ©2004 Fairchild Semiconductor Corporation PN3646 T =25 C unless otherwise noted a Parameter - Continued T =25 C unless otherwise noted a Test Condition I = 10mA ...
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... Storage Time s t Turn-On Time on t Turn-Off Time off Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation Ta=25 C unless otherwise noted (Continued) Test Condition I = 300mA 10V 30mA =25 C unless otherwise noted a Parameter Min. ...
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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, October 2004 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...