MMBTA56-7 Diodes Inc, MMBTA56-7 Datasheet - Page 2
![TRANSISTOR PNP 80V SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
MMBTA56-7
Manufacturer Part Number
MMBTA56-7
Description
TRANSISTOR PNP 80V SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBTA55-7-F.pdf
(3 pages)
Specifications of MMBTA56-7
Transistor Type
PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
300mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMBTA56DITR
MMBTA56TR
MMBTA56TR
MMBTA56TR
MMBTA56TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA56-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
DS30054 Rev. 11 - 2
1,000
100
100
400
300
250
200
150
350
100
10
10
50
1
0
1
1
Fig. 5 Gain-Bandwidth Product vs. Collector Current
0
V
CE
Fig. 3 DC Current Gain vs. Collector Current
T = 25°C
25
A
= 5V
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
C
I , COLLECTOR CURRENT (mA)
C
A
Fig. 1 Max Power Dissipation vs
V
50
CE
= 5V
10
Ambient Temperature
75
T = -50°C
A
100 125
10
100
T = 150°C
150
A
Note 1
175
1,000
200
100
www.diodes.com
2 of 3
1.0
0.6
0.5
0.4
0.9
0.8
0.7
0.3
0.2
0.1
0.25
0.15
0.10
0.20
0.05
0.1
0
1
Fig. 4 Base Emitter Voltage vs. Collector Current
V
CE
I
I
C
B
Fig. 2 Collector Emitter Saturation Voltage
= 10
= 5V
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
T = 150°C
A
1
vs. Collector Current
10
T = 25°C
A
10
T = -50°C
T = 25°C
100
A
A
T = 150°C
MMBTA55 / MMBTA56
A
T = -50°C
© Diodes Incorporated
A
100
1,000