BCW60C,235 NXP Semiconductors, BCW60C,235 Datasheet - Page 2
![TRANSISTOR NPN 32V 100MA SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BCW60C,235
Manufacturer Part Number
BCW60C,235
Description
TRANSISTOR NPN 32V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCW60B235.pdf
(6 pages)
Specifications of BCW60C,235
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
32V
Vce Saturation (max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
933324100235
BCW60C /T3
BCW60C /T3
BCW60C /T3
BCW60C /T3
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 22
BCW60B
BCW60C
BCW60D
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
AC∗
AD∗
AB∗
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C
2
PINNING
CONDITIONS
handbook, halfpage
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
BCW60 series
MAM255
32
32
5
100
200
200
250
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT