2PB709ARW,115 NXP Semiconductors, 2PB709ARW,115 Datasheet - Page 3

TRANSISTOR PNP 45V 100MA SC59

2PB709ARW,115

Manufacturer Part Number
2PB709ARW,115
Description
TRANSISTOR PNP 45V 100MA SC59
Manufacturer
NXP Semiconductors
Datasheets

Specifications of 2PB709ARW,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
210 @ 2mA, 10V
Power - Max
200mW
Frequency - Transition
70MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
210
Gain Bandwidth Product Ft
70 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
70 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2PB709ARW T/R
2PB709ARW T/R
934057079115
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
CHARACTERISTICS
T
Note
1. Pulse test: t
2002 Jun 26
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
PNP general purpose transistor
th j-a
c
Handbook SC18”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
2PB709AQW
2PB709ARW
2PB709ASW
2PB709AQW
2PB709ARW
2PB709ASW
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
note 1
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= −2 mA; V
= −100 mA; I
= −1 mA; V
e
= 0; V
3
CB
CB
EB
CONDITIONS
note 1
= −45 V
= −45 V; T
= −5 V
CB
CE
CE
CONDITIONS
B
= −10 V;
= −10 V
= −10 V;
= −10 mA;
j
= 150 °C
160
210
290
60
70
80
MIN.
VALUE
625
−10
−5
−10
260
340
460
−500
5
2PB709AW
Product data sheet
MAX.
UNIT
K/W
nA
μA
nA
mV
pF
MHz
MHz
MHz
UNIT

Related parts for 2PB709ARW,115