2PB709ASW,115 NXP Semiconductors, 2PB709ASW,115 Datasheet

TRANSISTOR PNP 45V 100MA SC59

2PB709ASW,115

Manufacturer Part Number
2PB709ASW,115
Description
TRANSISTOR PNP 45V 100MA SC59
Manufacturer
NXP Semiconductors
Datasheets

Specifications of 2PB709ASW,115

Package / Case
SC-70-3, SOT-323-3
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
500mV @ 10mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
290 @ 2mA, 10V
Power - Max
200mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
210
Gain Bandwidth Product Ft
70 MHz
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 45 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 100 mA
Maximum Dc Collector Current
- 200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
80 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2PB709ASW T/R
2PB709ASW T/R
934057080115
1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
I
I
I
Table 1.
Table 2.
Symbol Parameter
V
I
h
Pin
1
2
3
C
FE
CEO
2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 — 19 March 2007
General-purpose transistor
Small SMD plastic package
General-purpose switching and amplification
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
Description
base
emitter
collector
Conditions
open base
V
I
C
CE
= 2 mA
= 10 V;
Simplified outline
1
Min
-
-
210
3
2
Typ
-
-
-
Product data sheet
Symbol
Max
340
45
100
1
sym013
3
2
Unit
V
mA

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2PB709ASW,115 Summary of contents

Page 1

V, 100 mA PNP general-purpose transistor Rev. 01 — 19 March 2007 1. Product profile 1.1 General description PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD601ART. 1.2 Features I General-purpose ...

Page 2

... NXP Semiconductors 3. Ordering information Table 3. Type number 2PB709ART 4. Marking Table 4. Type number 2PB709ART [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot ...

Page 3

... NXP Semiconductors Fig 1. Power derating curve 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2PB709ART_1 Product data sheet 300 P tot (mW) 200 100 FR4 PCB, standard footprint Thermal characteristics Parameter thermal resistance from ...

Page 4

... NXP Semiconductors th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO ...

Page 5

... NXP Semiconductors 500 h FE (1) 400 300 (2) 200 (3) 100 ( 150 C amb ( amb ( amb Fig 3. DC current gain as a function of collector current; typical values 1.3 V BEsat (V) 0.9 (1) (2) 0.5 ( amb ( amb ( 150 C amb Fig 5. Base-emitter saturation voltage as a function of collector current; typical values ...

Page 6

... NXP Semiconductors 8. Package outline Fig 7. Package outline SOT23 (TO-236AB) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number 2PB709ART [1] For further information and the availability of packing methods, see 2PB709ART_1 Product data sheet 45 V, 100 mA PNP general-purpose transistor 3 ...

Page 7

... NXP Semiconductors 10. Soldering Fig 8. Reflow soldering footprint SOT23 (TO-236AB) 4.60 Fig 9. Wave soldering footprint SOT23 (TO-236AB) 2PB709ART_1 Product data sheet 2.90 2.50 0.85 2 3.00 1.30 0.85 3 0.50 (3x) 0.60 (3x) 1.00 3.30 3.40 1.20 (2x 4.00 1.20 3 2.80 4.50 Rev. 01 — 19 March 2007 ...

Page 8

... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date 2PB709ART_1 20070319 2PB709ART_1 Product data sheet 45 V, 100 mA PNP general-purpose transistor Data sheet status Change notice Product data sheet - Rev. 01 — 19 March 2007 2PB709ART Supersedes - © NXP B.V. 2007. All rights reserved. ...

Page 9

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 10

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 Legal information ...

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