BSR43,115 NXP Semiconductors, BSR43,115 Datasheet

TRANS NPN 60V 1A SOT-89

BSR43,115

Manufacturer Part Number
BSR43,115
Description
TRANS NPN 60V 1A SOT-89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSR41115.pdf (7 pages)

Specifications of BSR43,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.35W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1350 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
90V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
30
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933418100115
BSR43 T/R
BSR43 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSR43,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 28
dbook, halfpage
DATA SHEET
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 13

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BSR43,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BSR40; BSR41; BSR42; BSR43 NPN medium power transistors Product data sheet Supersedes data of 1999 Apr 28 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 13 ...

Page 2

... NXP Semiconductors NPN medium power transistors FEATURES • High current (max • Low voltage (max. 80 V). APPLICATIONS • Thick and thin-film circuits • Telephony and general industrial applications. DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR31 and BSR33. ...

Page 3

... NXP Semiconductors NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BSR40; BSR41 BSR42; BSR43 V collector-emitter voltage CEO BSR40; BSR41 BSR42; BSR43 V emitter-base voltage EBO I collector current (DC peak collector current ...

Page 4

... NXP Semiconductors NPN medium power transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE BSR40; BSR42 BSR41; BSR43 DC current gain BSR40; BSR42 BSR41; BSR43 DC current gain BSR40; BSR42 BSR41; BSR43 ...

Page 5

... NXP Semiconductors NPN medium power transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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