2SA2069(TE12L,F) Toshiba, 2SA2069(TE12L,F) Datasheet

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2SA2069(TE12L,F)

Manufacturer Part Number
2SA2069(TE12L,F)
Description
TRANSISTOR PNP 20V 1.5A SC-62
Manufacturer
Toshiba
Datasheet

Specifications of 2SA2069(TE12L,F)

Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
140mV @ 17mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 150mA, 2V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
High-Speed Switching Applications
DC-DC Converter Applications
Absolute Maximum Ratings
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
area: 645 mm
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
t = 10 s
2
Pulse
)
DC
DC
f
FE
= 37 ns (typ.)
TOSHIBA Transistor Silicon PNP Epitaxial Type
= 200 to 500 (I
(Ta = 25°C)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CP
I
(Note 1)
T
stg
C
B
C
2SA2069
j
C
CE (sat)
= −0.15 A)
−55 to 150
= −0.14 V (max)
Rating
−150
−1.5
−2.5
−20
−20
150
2.0
1.0
−7
1
Unit
mA
°C
°C
W
V
V
V
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5K1A
SC-62
2006-11-09
2SA2069
Unit: mm

Related parts for 2SA2069(TE12L,F)

2SA2069(TE12L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time 20 μ Input I B1 ...

Page 3

I – −1.6 Common emitter − 25°C Single nonrepetitive pulse −1.2 −0.8 −0.4 0 −0.2 −0.4 −0.6 0 Collector-emitter voltage – (sat) C −1 Common emitter ...

Page 4

Safe Operating Area − max (pulsed) ♦ 100 μs♦ 10 ms♦ 1 ms♦ max (continuous) 100 ms♦* −1 10 s♦* DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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