MMBT4401LT3G ON Semiconductor, MMBT4401LT3G Datasheet - Page 5

• Manufacturer Part Number: MMBT4401LT3G
• Description: TRANS NPN GP 40V 600MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBT4401LT3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 300mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
450
400
350
300
250
200
150
100
1.2
1.0
0.8
0.6
0.4
0.2
50
0
0
0
0.0001
0.01
0.001
T
I
C
- 55°C
J
25°C
/I
= 150°C
I
Figure 15. Collector−Emitter Saturation
B
C
= 10
= 1.0 mA
Voltage vs. Collector Current
0.001
I
C
, COLLECTOR CURRENT (A)
0.01
0.01
10 mA
25°C
Figure 14. Collector Saturation Region
0.1
STATIC CHARACTERISTICS
150°C
-55°C
Figure 13. DC Current Gain
0.1
http://onsemi.com
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (mA)
1
5
100 mA
0.1
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
+ 0.5
0
0.1 0.2
1
Figure 16. Temperature Coefficients
0.5
300 mA
1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
q
5.0
VC
q
VB
for V
500 mA
for V
10
10
CE(sat)
BE
20
V
V
V
CE
CE
CE
= 5.0 V
= 2.0 V
= 1.0 V
50
100
200
100
500
1