BC858BWT1G ON Semiconductor, BC858BWT1G Datasheet
BC858BWT1G
Specifications of BC858BWT1G
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BC858BWT1G Summary of contents
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC- -70/SOT- -323 which is designed for low power surface mount applications. Features These ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector -- Emitter Breakdown Voltage (I = --10 mA) C Collector -- Emitter Breakdown Voltage (I = --10 mA Collector -- Base Breakdown Voltage (I = --10 mA) C Emitter ...
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V = -- 25C A 1.0 0.7 0.5 0.3 0.2 --0.2 --0.5 --1.0 --2.0 --5.0 --10 -- COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain --2.0 --1.6 --1 ...
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V = --5 25C A 2.0 1.0 0.5 0.2 --10 --50 --100 --0.1 --0.2 --1.0 --2.0 --5.0 -- COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain --2.0 --1 --20 mA --50 ...
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... CE Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device BC856BWT1G BC857BWT1G BC857CWT1G BC858AWT1G BC858BWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk) t DUTY CYCLE 2.0 5.0 ...
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... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...