MMBT4124LT1G ON Semiconductor, MMBT4124LT1G Datasheet - Page 2
MMBT4124LT1G
Manufacturer Part Number
MMBT4124LT1G
Description
TRANS NPN GP 20V 200MA SOT-23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT4124LT1G.pdf
(5 pages)
Specifications of MMBT4124LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
225mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.2 A
Dc Collector/base Gain Hfe Min
120
Maximum Operating Frequency
300 MHz
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
25V
Collector-base Voltage
30V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
120
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT4124LT1G
Manufacturer:
ON
Quantity:
9 000
Company:
Part Number:
MMBT4124LT1G
Manufacturer:
ON Semiconductor
Quantity:
4
Company:
Part Number:
MMBT4124LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT4124LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector−Emitter Saturation Voltage (Note 3)
Base−Emitter Saturation Voltage (Note 3)
Current−Gain − Bandwidth Product
Input Capacitance
Collector−Base Capacitance
Small−Signal Current Gain
Current Gain − High Frequency
Noise Figure
7.0
5.0
3.0
2.0
1.0
10
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(V
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
E
C
C
C
C
0.1
CB
EB
EB
= 1.0 mAdc, I
= 10 mAdc, I
= 10 mAdc, I
= 2.0 mAdc, V
= 50 mAdc, V
= 50 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 0, V
= 2.0 mAdc, V
= 10 mAdc, V
= 2.0 mAdc, V
= 100 mAdc, V
= 20 Vdc, I
= 3.0 Vdc, I
= 0.5 Vdc, I
0.2 0.3 0.5 0.7
CB
= 5.0 V, f = 1.0 MHz)
E
C
B
B
E
REVERSE BIAS VOLTAGE (VOLTS)
E
C
CE
CE
C
CE
= 0)
= 0)
CE
CE
CE
CE
= 5.0 mAdc)
= 5.0 mAdc)
= 0)
Figure 1. Capacitance
= 0)
= 0)
= 0, f = 1.0 MHz)
= 1.0 Vdc)
= 20 Vdc, f = 100 MHz)
= 20 Vdc, f = 100 MHz)
= 1.0 Vdc)
= 10 Vdc, R
= 10 V, f = 1.0 kHz)
= 5.0 Vdc, R
1.0
C
ibo
C
2.0 3.0 5.0 7.0 10
Characteristic
obo
S
S
= 10 k W, f = 1.0 kHz)
= 1.0 k W, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
20 30 40
http://onsemi.com
2
10.0
200
100
7.0
5.0
70
50
30
20
1.0
V
I
V
C
CC
EB(off)
/I
2.0 3.0
B
t
= 3 V
f
= 10
= 0.5 V
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Figure 2. Switching Times
CE(sat)
BE(sat)
I
I
C
|h
h
C
CBO
EBO
NF
h
I
f
FE
ibo
C
T
cb
fe
fe
5.0 7.0 10
, COLLECTOR CURRENT (mA)
|
t
r
t
d
t
Min
120
300
120
120
s
5.0
3.0
25
30
60
−
−
−
−
−
−
−
20 30
Max
0.95
360
480
480
0.3
8.0
4.0
5.0
50
50
−
−
−
−
−
−
50 70 100
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−
−
200