BC 807-40W E6433 Infineon Technologies, BC 807-40W E6433 Datasheet - Page 2

• Manufacturer Part Number: BC 807-40W E6433
• Description: TRANSISTOR PNP AF 45V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BC 807-40W E6433

• Package / Case: SOT-323
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 200 MHz
• Collector- Emitter Voltage Vceo Max: 45 V
• Continuous Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BC80740WE6433; BC80740WE6433XT; SP000014689

Maximum Ratings
Parameter
Collector-emitter voltage
BC807...
BC808...
Collector-base voltage
BC807...
BC808...
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC807, BC808
BC807W, BC808W
For calculation of R
S
S
79 °C BC807, BC808
130 °C BC807W, BC808W
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
I
I
I
P
T
T
Symbol
R
C
CM
B
BM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
Value
Value
BC807.../BC808...
1000
330
250
500
100
200
150
45
25
50
30
215
5
80
2007-06-08
Unit
V
mA
mW
°C
Unit
K/W