MMBTA42LT1G ON Semiconductor, MMBTA42LT1G Datasheet

TRANS SS NPN 300V HV SOT23

MMBTA42LT1G

Manufacturer Part Number
MMBTA42LT1G
Description
TRANS SS NPN 300V HV SOT23
Manufacturer
ON Semiconductor
Type
High Voltager
Datasheets
1.MMBTA42LT3G.pdf (5 pages)
2.MMBTA42LT1G.pdf (4 pages)
3.MMBTA42LT1G.pdf (6 pages)

Specifications of MMBTA42LT1G

Transistor Type
NPN
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
500mV @ 2mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 10V
Power - Max
225mW
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
225 mW
Maximum Operating Frequency
50 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
25 at 1 mA at 10 V
Minimum Operating Temperature
- 55 C
Current, Collector
50 mA
Current, Gain
40
Frequency
50 MHz
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage
300V
Emitter-base Voltage
6V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
25
Frequency (max)
50MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA42LT1GOS
MMBTA42LT1GOS
MMBTA42LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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MMBTA42LT1G,
MMBTA43LT1G
High Voltage Transistors
NPN Silicon
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR−5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate (Note 2) T
Derate above 25°C
Characteristic
Characteristic
A
= 25°C
A
= 25°C
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
300
200
300
200
500
225
556
300
417
6.0
6.0
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
1D M G
MARKING DIAGRAMS
1D
M1E = MMBTA43LT
M
G
BASE
G
http://onsemi.com
1
SOT−23 (TO−236)
= MMBTA42LT
= Date Code*
= Pb−Free Package
1
CASE 318
STYLE 6
COLLECTOR
2
EMITTER
Publication Order Number:
3
2
3
1
M1E M G
MMBTA42LT1/D
G

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MMBTA42LT1G Summary of contents

Page 1

... MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Characteristic Collector −Emitter Voltage MMBTA42 MMBTA43 Collector −Base Voltage MMBTA42 MMBTA43 Emitter −Base Voltage MMBTA42 MMBTA43 Collector Current − Continuous ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1.0 mAdc Collector −Base Breakdown Voltage (I = 100 mAdc Emitter −Base Breakdown Voltage (I = 100 ...

Page 3

T = 150°C J 25°C 100 −55° COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0 ...

Page 4

TYPICAL CHARACTERISTICS 100 COLLECTOR CURRENT (mA) C Figure 7. Current−Gain — Bandwidth Product http://onsemi.com 25°C J 100 ...

Page 5

... ORDERING INFORMATION Device Order Number MMBTA42LT1G MMBTA42LT3G MMBTA43LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package Type SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) http://onsemi ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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