BCP 52-16 E6327 Infineon Technologies, BCP 52-16 E6327 Datasheet
BCP 52-16 E6327
Specifications of BCP 52-16 E6327
SP000010696
Related parts for BCP 52-16 E6327
BCP 52-16 E6327 Summary of contents
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PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type BCP51 BCP51-16 ...
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Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53 Collector-base voltage BCP51 BCP52 BCP53 Emitter-base voltage Collector current ≤ Peak collector current Base current Peak base current Total power dissipation- ≤ 120° Junction temperature Storage ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BCP51 mA BCP52 mA ...
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DC current gain BCP 51... 100 - Base-emitter ...
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Transition frequency BCP 51... MHz Permissible Pulse Load ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...