MJB45H11T4G ON Semiconductor, MJB45H11T4G Datasheet

MJB45H11T4G

Manufacturer Part Number

MJB45H11T4G

Description

TRANS PWR PNP 10A 80V D2PAK-3

Manufacturer

ON Semiconductor

Datasheet

1.MJB44H11T4G.pdf (6 pages)

Specifications of MJB45H11T4G

Transistor Type

PNP

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

1V @ 400mA, 8A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

40 @ 4A, 1V

Power - Max

Frequency - Transition

40MHz

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

PNP

Number Of Elements

Collector-emitter Voltage

80V

Emitter-base Voltage

Collector Current (dc) (max)

10A

Dc Current Gain (min)

Power Dissipation

Frequency (max)

40MHz

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MJB45H11T4G
MJB45H11T4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJB45H11T4G

Manufacturer:

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJB45H11T4G

Manufacturer:

ON/安森美

Quantity:

20 000

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MJB44H11 (NPN),

MJB45H11 (PNP)

Complementary

Power Transistors

amplification and switching such as output or driver stages in

applications such as switching regulators, converters and power

amplifiers.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

December, 2005 − Rev. 2

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Total Power Dissipation

Operating and Storage Junction

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Complementary power transistors are for general purpose power

Low Collector−Emitter Saturation Voltage −

Fast Switching Speeds

Complementary Pairs Simplifies Designs

Epoxy Meets UL 94 V−0 @ 0.125 in

ESD Ratings:

Pb−Free Packages are Available

@ T

Derate above 25°C

@ T

Derate above 25°C

Temperature Range

PAK for Surface Mount

CE(sat)

= 25°C

= 1.0 V (Max) @ 8.0 A

Characteristic

Rating

− Continuous

− Peak

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

Preferred Devices

Symbol

, T

CEO

qJC

qJA

stg

−55 to 150

Value

0.016

1.67

Max

2.0

2.5

W/°C

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MJB44H11

MJB44H11G

MJB44H11T4

MJB44H11T4G

MJB45H11

MJB45H11G

MJB45H11T4

MJB45H11T4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

80 VOLTS, 50 WATTS

ORDERING INFORMATION

SILICON POWER

TRANSISTORS

10 AMPERES,

http://onsemi.com

= 4 or 5

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

CASE 418B

STYLE 1

PAK

Publication Order Number:

PAK

800/Tape & Reel

50 Units/Rail

MARKING

DIAGRAM

Shipping

B4xH11G

MJB44H11/D

AYWW

†

Related parts for MJB45H11T4G

MJB45H11T4G Summary of contents

Page 1

... R 2.5 qJC MJB45H11T4 °C qJA MJB45H11T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage ( mA Collector Cutoff Current (V = Rated V CE CEO Emitter Cutoff Current ( Vdc CHARACTERISTICS Collector−Emitter Saturation Voltage ( Adc, ...

Page 3

MJB44H11 (NPN), MJB45H11 (PNP) 100 5.0 3.0 2.0 ≤ 70° DUTY CYCLE ≤ 50% 1.0 0.5 0.3 0.2 0.1 1.0 2.0 3.0 5.0 7 COLLECTOR−EMITTER VOLTAGE (VOLTS) CE ...

Page 4

MJB44H11 (NPN), MJB45H11 (PNP) 1000 100 T = 25° 0 COLLECTOR CURRENT (AMPS) C Figure 4. MJB44H11 DC Current Gain 1000 T = 125°C J 25°C 100 −40 ° ...

Page 5

... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE VIEW W− ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MJB44H11 (NPN), MJB45H11 (PNP) N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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