MJF3055 ON Semiconductor, MJF3055 Datasheet

MJF3055

Manufacturer Part Number

MJF3055

Description

TRANS PWR NPN 10A 60V TO220FP

Manufacturer

ON Semiconductor

Datasheet

1.MJF3055G.pdf (5 pages)

Specifications of MJF3055

Transistor Type

NPN

Current - Collector (ic) (max)

10A

Voltage - Collector Emitter Breakdown (max)

90V

Vce Saturation (max) @ Ib, Ic

2.5V @ 3.3A, 10A

Current - Collector Cutoff (max)

1µA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 4A, 4V

Power - Max

Frequency - Transition

2MHz

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MJF3055OS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MJF3055G

Manufacturer:

AVAGO

Quantity:

4 162

Current page: 1 of 5
Download datasheet (116Kb)

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Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

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MJF3055 (NPN),

MJF2955 (PNP)

Complementary

Silicon Power Transistors

applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

2. Measurement made with thermocouple contacting the bottom insulated

3. Proper strike and creepage distance must be provided.

*For additional information on our Pb−Free strategy and soldering details,

July, 2008 − Rev. 7

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Sustaining Voltage

Collector−Emitter Breakdown Voltage

Base−Emitter Voltage

Collector Current − Continuous

Base Current − Continuous

RMS Isolation Voltage (Note 3)

Total Power Dissipation @ T

Operating and Storage Temperature Range

Thermal Resistance, Junction−to−Case (Note 2)

Thermal Resistance, Junction−to−Ambient

Lead Temperature for Soldering Purposes

Specifically designed for general purpose amplifier and switching

Isolated Overmold Package (1500 Volts RMS Min)

Electrically Similar to the Popular MJE3055T and MJE2955T

Collector−Emitter Sustaining Voltage − V

10 Amperes Rated Collector Current

No Isolating Washers Required

Reduced System Cost

UL Recognized, File #E69369, to 3500 V

Epoxy Meets UL 94 V−0 at 0.125 in

ESD Ratings: Machine Model, C; u400 V

Pb−Free Packages are Available*

surface (in a location beneath the die), the devices mounted on a heatsink with

thermal grease and a mounting torque of ≥ 6 in. lbs.

(t = 0.3 sec, R.H. ≤ 30%, T

Per Figure 5

Derate above 25_C

Characteristic

Human Body Model, 3B; u8000 V

Rating

= 25_C

= 25_C (Note 2)

= 25_C)

Î Î Î Î

CEO(sus)

RMS

Symbol

CEO(sus)

EBO

ISOL

, T

CES

qJC

qJA

Isolation

stg

90 Volts

Î Î Î

Value

–55 to

0.016

4500

+150

0.25

Max

62.5

260

5.0

6.0

2.0

4.0

Î Î Î

W/_C

_C/W

Unit

Vdc

Adc

RMS

MJF2955

MJF2955G

MJF3055

MJF3055G

Device

COMPLEMENTARY SILICON

POWER TRANSISTORS

90 VOLTS, 30 WATTS

Fxx55 = Specific Device Code

ORDERING INFORMATION

MARKING DIAGRAM

TO−220 FULLPACK

http://onsemi.com

TO−220 FULLPACK

10 AMPERES

TO−220 FULLPACK

= Pb−Free Package

= Assembly Location

= Year

= Work Week

xx= 29 or 30

(Pb−Free)

Package

Fxx55G

TO−220 FULLPACK

AYWW

Publication Order Number:

CASE 221D

STYLE 2

50 Units/Rail

Shipping

MJF3055/D

Related parts for MJF3055

MJF3055 Summary of contents

Page 1

... MJF3055 (NPN), MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. Features • Isolated Overmold Package (1500 Volts RMS Min) • Electrically Similar to the Popular MJE3055T and MJE2955T • Collector−Emitter Sustaining Voltage − V • ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

... 4.0 30 3.0 20 2 500 300 100 ms 200 T = 150° 100 25° 55° 100 0.01 0.02 0.05 0.1 PNP MJF3055 1.4 1 25° 0 BE(sat 0.4 0 CE(sat 0.1 0.2 0.3 Figure 3. “On” Voltages 100 120 80 T, TEMPERATURE (°C) Figure 4. Power Derating http://onsemi ...

Page 4

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not . recommend exceeding 10 in lbs of mounting torque under any mounting conditions ...

Page 5

... BSC Q 0.122 0.138 3.10 3.50 R 0.099 0.117 2.51 2.96 S 0.092 0.113 2.34 2.87 U 0.239 0.271 6.06 6.88 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJF3055/D ...

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