PDTA115TS,126 NXP Semiconductors, PDTA115TS,126 Datasheet - Page 10

• Manufacturer Part Number: PDTA115TS,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTA115TS,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058778126; PDTA115TS AMO; PDTA115TS AMO

NXP Semiconductors
Fig 7.
PDTA115T_SER_5
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
Package outline SOT54A
VERSION
OUTLINE
SOT54A
D
5.2
5.0
A
d
0.48
0.40
b
E
3
1
2
0.66
0.55
b 1
IEC
b 1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
REFERENCES
Rev. 05 — 2 September 2009
0
4.2
3.6
E
PNP resistor-equipped transistors; R1 = 100 k , R2 = open
A
5.08
e
JEITA
scale
2.5
2.54
e 1
14.5
12.7
5 mm
L
L 2
L 1
L
max.
1
3
(1)
L 2
PDTA115T series
3
2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
b
ISSUE DATE
c
97-05-13
04-06-28
e 1
e
SOT54A
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